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PECVD and plasma etching at atmospheric pressure by means of a linearly‐extended DC arc plasma source
Author(s) -
Dani Ines,
Hopfe Volkmar,
Rogler Daniela,
Lopez Elena,
Mäder Gerrit
Publication year - 2007
Publication title -
vakuum in forschung und praxis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.213
H-Index - 13
eISSN - 1522-2454
pISSN - 0947-076X
DOI - 10.1002/vipr.200790035
Subject(s) - plasma enhanced chemical vapor deposition , atmospheric pressure plasma , etching (microfabrication) , plasma , atmospheric pressure , silicon nitride , substrate (aquarium) , plasma cleaning , plasma processing , materials science , silicon , deposition (geology) , optoelectronics , plasma etching , reactive ion etching , coating , plasma torch , nanotechnology , layer (electronics) , paleontology , oceanography , physics , quantum mechanics , sediment , geology , biology
Plasma processes are applied for a variety of surface modifications. Examples of this are coatings to achieve improved corrosion and scratch protection, or surface cleaning and texturing. However, since these processes usually take place in a vacuum, they are unfortunately not applicable for industrial use on a large scale. Plasma‐enhanced CVD processes at atmospheric pressure enable the deposition of functional coatings on components and semi‐finished parts within a continuous air‐to‐air process without the use of expensive vacuum systems. Their integration into in‐line production processes definitely reduces substrate handling and coating costs. A thermal plasma source, based on a linearly‐extended DC arc discharge at atmospheric pressure, has been tested for the deposition of silicon nitride at substrate temperatures below 300 C in a continuous PECVD process. Furthermore, this source has been tested for plasma‐chemical etching and texturing of silicon as well.