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An Analytical Evaluation of Performance Limit for PiN diodes and IGBTs
Author(s) -
Terashima Tomohide
Publication year - 2021
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.23333
Subject(s) - insulated gate bipolar transistor , dissipation , diode , layer (electronics) , voltage drop , limit (mathematics) , voltage , position (finance) , materials science , electrical engineering , optoelectronics , engineering , physics , nanotechnology , mathematics , thermodynamics , mathematical analysis , finance , economics
This paper reports analytical evaluation for minimum reverse recovery loss and turn‐off loss of PiN diodes and IGBTs, respectively. In this evaluation, we take account of structural parameters and current continuity at the both ends of the i‐layer, and we calculate switching losses ( E ) from energy dissipation on the i‐layer during switching action by using position integration instead of time integration. In the case of IGBT, we assume that depletion layer spreads from the i‐layer and n + layer interface of the PiN diode that corresponds to bottom p type layer ‐ n − layer ‐ p type backgate region of IGBT cells. We evaluate optimum structure for minimum energy dissipation of these switching actions and conduction states by newly employed index RE consists of R calculated by voltage drop at the i‐layer and both ends of the i‐layer and E . We clarify that ideal carrier profile for minimum RE , and we also evaluate structural parameters for that condition. © 2021 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.