Premium
Insight on the Phenyltriethoxysilane Self‐assembled Monolayers as Modification Layer for InGaZnO Thin‐Film Transistors
Author(s) -
Xiao Peng,
Wang Wenfeng,
Ye Yingyi,
Dong Ting,
Chen Jianwen,
Yuan Jian
Publication year - 2020
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.23195
Subject(s) - thin film transistor , monolayer , materials science , passivation , hysteresis , layer (electronics) , threshold voltage , self assembled monolayer , optoelectronics , desorption , transistor , adsorption , electron mobility , nanotechnology , chemistry , voltage , electrical engineering , condensed matter physics , physics , engineering
High‐mobility, high‐stability InGaZnO (IGZO) thin‐film transistors (TFTs) were fabricated with the aid of phenyltriethoxysilane (PTES) self‐assembled monolayers (SAMs) instead of traditional passivation layer. The effect of PTES on the performance IGZO‐TFTs was investigated, systematically. Compared to the IGZO‐TFTs without PTES modification, PTES‐treated IGZO‐TFTs exhibited higher mobility and smaller hysteresis of transfer curves, owing to less adsorption/desorption effect on the IGZO surface and mild self‐assembly process. Meanwhile, IGZO‐TFTs modified with PTES SAMs exhibited a more excellent electrical stability with a threshold voltage shift (Δ V th ) of only 0.17 V than the unmodified one with a Δ V th of 5.38 V, which was attributed to the formation of hydrophobic PTES SAMs on the IGZO surface and the well‐ordered interface between PTES and back channel surface. © 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.