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Logic gates based on electrically driven nanoelectromechanical switches
Author(s) -
Van Toan Nguyen,
Zhao Dong,
Inomata Naoki,
Ono Takahito
Publication year - 2019
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.22814
Subject(s) - nand gate , logic gate , nand logic , and or invert , nanoelectromechanical systems , fabrication , materials science , and gate , optoelectronics , lithography , nanotechnology , etching (microfabrication) , nor logic , electrical engineering , pass transistor logic , nmos logic , logic family , engineering , logic synthesis , voltage , transistor , layer (electronics) , medicine , nanomedicine , alternative medicine , pathology , nanoparticle
This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated. © 2018 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.