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Loss analysis based on constant gate current for MOSFET selection of CCM boost converter
Author(s) -
Sasaki Masato,
Umegami Hirokatsu,
Yamamoto Masayoshi
Publication year - 2017
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.22573
Subject(s) - mosfet , thermal conduction , boost converter , constant (computer programming) , current (fluid) , power mosfet , power (physics) , constant current , electrical engineering , materials science , electronic engineering , voltage , physics , computer science , engineering , transistor , thermodynamics , composite material , programming language
Predicting the power losses in a semiconductor is an essential design process to determine the converter's size. In the continuous conduction mode (CCM) boost converter, the power loss of MOSFETs can be divided into the loss not depending on the gate current (the conduction loss) and losses depending on the gate current (the switching losses) leading to I DS transition period and V DS transition period. Therefore, analysis of both conduction and switching losses based on constant gate current can realize the MOSFET selection to improve the efficiency of the CCM boost converter.