Premium
SiC SBDs selection method based on loss analysis of boost converter
Author(s) -
Sasaki Masato,
Umegami Hirokatsu,
Yamamoto Masayoshi
Publication year - 2016
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.22359
Subject(s) - silicon carbide , materials science , capacitance , schottky diode , optoelectronics , schottky barrier , diode , boost converter , thermal conduction , capacitor , power loss , voltage , electrical engineering , junction temperature , diffusion capacitance , electronic engineering , power (physics) , engineering , chemistry , composite material , physics , electrode , quantum mechanics
Silicon carbide schottky barrier diodes (SiC SBDs) have much better characteristic than Si PiN diode in high voltage applications because SiC SBDs do not have recovery effect. However, simple replacing is not the most effective way. In a boost converter, the power loss caused by the SiC SBD can be divided into the conduction loss of the SiC SBD and the loss caused by the energy stored in the junction capacitance of the SiC SBD. Therefore analysis of not only the conduction loss but also the loss caused by the energy stored in the junction capacitance of the SiC SBD can realize the SiC SBD selection to improve the efficiency of the boost converter. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.