z-logo
Premium
High‐efficiency CMOS push‐pull power amplifier with multilayer center‐tapped transformer
Author(s) -
Nakamura Shingo,
Kanemoto Daisuke,
Sadakiyo Tomoki,
Kanaya Haruichi
Publication year - 2016
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.22228
Subject(s) - electrical engineering , amplifier , transformer , cascode , cmos , electrical impedance , engineering , transistor , rf power amplifier , input impedance , linearity , power added efficiency , center frequency , electronic engineering , voltage , band pass filter
This paper describes the design of a push‐pull power amplifier (PA) with a center‐tapped transformer for transmitter applications on the 5.2‐GHz band using 0.18 μ m CMOS technology. The type of the proposed PA is based on a double‐ended push–pull (DEPP) configuration. DEPP has a simple construction with only transistors and transformers. The PA has reverse‐phased cascode‐connected transistors. The proposed transformer has a multilayer structure and was designed using electromagnetic field simulation. To achieve high power added efficiency (PAE), we assumed the optimized output impedance technique with a tunable impedance antenna. The PA has 13.2 dB linearity gain, 14.9 dBm 1‐dB compression point (P1dB), and 27.4% maximum PAE. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom