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Electronic circuit using magnetic tunnel junctions with normal and inverse magnetoresistive effects
Author(s) -
Isogami Shinji,
Owada Takuya
Publication year - 2014
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.22040
Subject(s) - magnetoresistance , quantum tunnelling , tunnel magnetoresistance , materials science , condensed matter physics , electronic circuit , optoelectronics , inverse , sputter deposition , magnetic storage , electrical engineering , logic gate , sputtering , physics , magnetic field , nanotechnology , engineering , ferromagnetism , thin film , quantum mechanics , mathematics , geometry
CoFeB/MgO/CoFeB‐based magnetic tunnel junctions (CoFeB‐MTJs) with the tunneling magnetoresistance (TMR) ratio of 181% and Fe 4 N/MgO/CoFe‐based MTJs (Fe 4 N‐MTJs) with −66% TMR ratio were fabricated using a magnetron sputtering system. In this letter, we report the layout of an electronic circuit comprising both MTJs. Two independent external magnetic fields were applied to the MTJs, which worked as binary inputs as in present logic gates. The demonstrations reveal that the circuits behave like a three‐way switching device with NOR logic operation. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.