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A modified LDMOS device with improved ESD protection performance
Author(s) -
Liang Hailian,
Gu Xiaofeng,
Xiao Shaoqing,
Dong Shurong,
Wu Jian,
Zhong Lei
Publication year - 2014
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.22030
Subject(s) - ldmos , electrostatic discharge , electrical engineering , voltage , materials science , robustness (evolution) , breakdown voltage , thyristor , engineering , electronic engineering , chemistry , biochemistry , gene
A modified lateral‐diffusion metal–oxide–semiconductor (MLDMOS) device with improved electrostatic discharge (ESD) protection performance is proposed for high‐voltage ESD protection. In comparison with the traditional LDMOS and the LDMOS with an embedded silicon‐controlled rectifier (LDMOS‐SCR), the proposed device has better ESD robustness and higher holding voltage. By optimizing key parameters, such as the spacing between the drain and the poly gate, the effective channel length, and the number of fingers, the MLDMOS can achieve a maximum failure current over 80 mA/µm, which is larger than that of LDMOS‐SCR. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.