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Output characteristics model for an a‐Si ISFET pH sensor
Author(s) -
Hashim Yasir,
Sidek Othman
Publication year - 2012
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.21706
Subject(s) - isfet , amorphous silicon , voltage , threshold voltage , transistor , field effect transistor , electrical engineering , materials science , silicon , channel (broadcasting) , optoelectronics , simple (philosophy) , conductivity , electronic engineering , engineering , analytical chemistry (journal) , chemistry , crystalline silicon , philosophy , epistemology , chromatography
Abstract A mathematical model for the calculation of the output characteristics of amorphous silicon hydrogenated (a‐Si:H) ion‐sensitive field‐effect transistors (ISFET) is developed, which depends on the integration of the conductivity channel versus gate voltage curve at fixed drain voltage. Single curve integration was changed to integration with many simple lines to obtain the I D − V D characteristics using computer programming. The results of this model were tested with those of experiments. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.