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Measurement of electrical characteristics of ZnO microvaristors
Author(s) -
Kabir Mahmudul,
Suzuki Masafumi,
Yoshimura Noboru,
Shiozawa Kayo,
Ogishima Miyuki,
Shintate Hitoshi,
Andoh Hideyasu
Publication year - 2012
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.21703
Subject(s) - varistor , ohmic contact , materials science , grain boundary , zinc , schottky barrier , micromanipulator , schottky diode , optoelectronics , electrical engineering , nanotechnology , metallurgy , computer science , voltage , engineering , microstructure , diode , layer (electronics) , artificial intelligence
A measurement technique is developed to measure the characteristics of zinc oxide (ZnO) microvaristors directly. We used Cu wires, a micromanipulator, and an optical microscope to gain ohmic contact of the measurement apparatus with ZnO particles. With our system, the I − V characteristics and C −2 − V characteristics were measured for 25 µm ZnO microvaristors. Our measurements show that these microparticles behave as varistors. Further measurement on the ZnO microvaristors and observation of their fine structure may help to understand the varistor behavior. It also can pave the way to the understanding of the electrical characteristics of grain boundaries as well as the double Schottky barrier formed at the grain boundaries. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.