Mechanical characterizations of topology‐insensitive rivet bonding using the sidewall bond principle | Zendy

Kang S. | Zendy; Lee E. | Zendy; Kim H. C. | Zendy; Chun K. | Zendy

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Mechanical characterizations of topology‐insensitive rivet bonding using the sidewall bond principle

Author(s) -

Kang S.,

Lee E.,

Kim H. C.,

Chun K.

Publication year - 2012

Publication title -

ieej transactions on electrical and electronic engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.254

H-Index - 30

eISSN - 1931-4981

pISSN - 1931-4973

DOI - 10.1002/tee.20701

Subject(s) - rivet , materials science , soldering , wafer , microelectromechanical systems , structural engineering , wafer bonding , hardening (computing) , composite material , topology (electrical circuits) , mechanical engineering , optoelectronics , engineering , electrical engineering , layer (electronics)

Our goal was to develop a topology‐insensitive rivet bonding method using the sidewall bond principle for MEMS devices and evaluate its mechanical characteristics. The proposed bonding method is comprised of two fundamental structures with a sidewall bond between them. The first is a male wafer having a relatively thick solder as a donor, and the second is a female wafer as an acceptor with a structure similar to a through‐via. The two wafers are bonded laterally by the reflow phenomena of the solder and the excess volume of the donor with the acceptor then generating a rivet. In this study, these structural features were investigated. The rivet bonding led to an enhancement in the bonding strength due to the plastic hardening behavior of the rivet, serving as a cushion for the stress. This was parametrically studied and experimentally verified. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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