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Surface passivation of the thin‐film LAPS with perhydropolysilazane‐derived silica treated by O 2 plasma
Author(s) -
Suzurikawa Jun,
Nakao Masayuki,
Takahashi Hirokazu
Publication year - 2011
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20674
Subject(s) - passivation , electrode , materials science , plasma , thin film , immersion (mathematics) , optoelectronics , layer (electronics) , chemical engineering , nanotechnology , chemistry , physics , mathematics , quantum mechanics , pure mathematics , engineering
Here, we describe a novel method for surface passivation of the thin‐film light addressable potentiometric sensor (LAPS). To form a uniform passivation layer, perhydropolysilazane (PHPS) was utilized as a spin‐coatable precursor of silica. After transformation of PHPS into silica by baking, we introduced an O 2 plasma treatment aiming for enhancement of the water resistance of the PHPS‐derived silica (PDS) film by completing the PHPS‐to‐silica conversion. To confirm the effect of the O 2 plasma treatment, the PDS film was deposited on a thin‐film LAPS electrode and tested by immersion in a cell culturing medium. The immersion test demonstrated that the plasma‐treated PDS film could keep the electrode stable longer than the untreated could. With the treated PSD film of 600 nm in thickness, a lifetime of the thin‐film LAPS was estimated at over 2 weeks, which is sufficient for cell culturing experiments. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.