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Effect of Traps on Carrier Injection and Transport in Organic Field‐effect Transistor
Author(s) -
Weis Martin,
Manaka Takaaki,
Iwamoto Mitsumasa
Publication year - 2010
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20549
Subject(s) - pentacene , organic field effect transistor , materials science , trapping , electric field , organic semiconductor , optoelectronics , dielectric , transistor , electron mobility , field effect transistor , charge carrier , space charge , threshold voltage , voltage , nanotechnology , thin film transistor , electrical engineering , electron , physics , ecology , engineering , layer (electronics) , quantum mechanics , biology
This study illustrates effect of traps on the charge injection and transport in the organic field‐effect transistor (OFET). Here are included silicon nanoparticles (NPs) on a semiconductor‐gate insulator interface, which work as trapping centers of charge carriers. Charge transport and injection phenomena are investigated by electrical measurements in presence of traps with designed densities. We find that OFETs with a low concentration of intrinsic carriers, such as a pentacene, are extremely sensitive to the internal electric fields. A significant threshold voltage shift due to trapped charge is observed, with a possibility to tune it by controlling the NP density. We demonstrate that the NP film can serve to design the amount of the accumulated charge in OFET and thus change the space‐charge‐limited conditions to the injection‐limited conditions. A detailed analysis of pentacene OFET based on dielectric properties and the Maxwell‐Wagner model reveals the internal electric field created by NPs. Additionally, the effect of NPs is discussed with respect to effective mobility, and its decrease is related to deceleration of carrier propagation by the trapping effect as well as low injection due to the increase of the carrier injection barrier by the internal field. Copyright © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.