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Growth of GaN LED Structure on Si Substrate by MBE and Monolithic Fabrication of GaN LED Cooling System
Author(s) -
Wakui Masashi,
Hu FangRen,
Sameshima Hidehisa,
Hane Kazuhiro
Publication year - 2010
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20513
Subject(s) - light emitting diode , metalorganic vapour phase epitaxy , materials science , optoelectronics , substrate (aquarium) , molecular beam epitaxy , chemical vapor deposition , fabrication , diode , epitaxy , nanotechnology , layer (electronics) , medicine , oceanography , pathology , geology , alternative medicine
GaN‐based light emitting diodes (LEDs) were fabricated by molecular beam epitaxy (MBE) on a GaN/Si substrate prepared by metal organic chemical vapor deposition (MOCVD). Blue light emission was obtained at the peak wavelength of 410 nm. An integration of GaN LEDs and a cooling system is proposed. GaN membrane structure with Si microchannels was fabricated from the GaN/Si substrate. A preliminary experiment for the proposed device was carried out. Copyright © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
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