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Examination of Maskless Etching Technique Using a Localized Surface Discharge Plasma
Author(s) -
Hamada Toshiyuki,
Sakoda Tatsuya,
Otsubo Masahisa
Publication year - 2010
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20501
Subject(s) - etching (microfabrication) , microelectronics , substrate (aquarium) , materials science , silicon nitride , plasma etching , silicon , optoelectronics , plasma , reactive ion etching , nanotechnology , geology , oceanography , physics , layer (electronics) , quantum mechanics
A maskless etching technique which is useful for solar cell manufacturing and microelectronics was examined using the localized surface discharge plasma at atmospheric pressure. Etchings were carried out on a crystalline silicon (Si) substrate and a silicon nitride (SiN) film coated on a Si substrate. Two‐ and three‐dimensional etching profiles were investigated. Based on the results, etching rates and an etching mechanism were discussed. Copyright © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.