Examination of Maskless Etching Technique Using a Localized Surface Discharge Plasma | Zendy

Hamada Toshiyuki | Zendy; Sakoda Tatsuya | Zendy; Otsubo Masahisa | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Examination of Maskless Etching Technique Using a Localized Surface Discharge Plasma

Author(s) -

Hamada Toshiyuki,

Sakoda Tatsuya,

Otsubo Masahisa

Publication year - 2010

Publication title -

ieej transactions on electrical and electronic engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.254

H-Index - 30

eISSN - 1931-4981

pISSN - 1931-4973

DOI - 10.1002/tee.20501

Subject(s) - etching (microfabrication) , microelectronics , substrate (aquarium) , materials science , silicon nitride , plasma etching , silicon , optoelectronics , plasma , reactive ion etching , nanotechnology , geology , oceanography , physics , layer (electronics) , quantum mechanics

A maskless etching technique which is useful for solar cell manufacturing and microelectronics was examined using the localized surface discharge plasma at atmospheric pressure. Etchings were carried out on a crystalline silicon (Si) substrate and a silicon nitride (SiN) film coated on a Si substrate. Two‐ and three‐dimensional etching profiles were investigated. Based on the results, etching rates and an etching mechanism were discussed. Copyright © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research