A highly sensitive thermosensing CMOS Circuit Based on self‐biasing circuit technique | Zendy

Hirose Tetsuya | Zendy; Hagiwara Atsushi | Zendy; Asai Tetsuya | Zendy; Amemiya Yoshihito | Zendy

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A highly sensitive thermosensing CMOS Circuit Based on self‐biasing circuit technique

Author(s) -

Hirose Tetsuya,

Hagiwara Atsushi,

Asai Tetsuya,

Amemiya Yoshihito

Publication year - 2009

Publication title -

ieej transactions on electrical and electronic engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.254

H-Index - 30

eISSN - 1931-4981

pISSN - 1931-4973

DOI - 10.1002/tee.20404

Subject(s) - biasing , subthreshold conduction , resistor , cmos , electronic circuit , electrical engineering , mosfet , electronic engineering , voltage , discrete circuit , circuit design , materials science , engineering , transistor

A thermosensing CMOS circuit that changes its internal voltage steeply at a critical temperature was developed. The circuit is based on a self‐biasing circuit technique and uses the temperature‐sensitive characteristics of MOSFETs operating in the subthreshold region. To develop this sensor device, a method to analyze self‐biasing circuits, which is different from a conventional one, was employed. This method is useful for understanding the self‐biasing circuit operation. A temperature sensor device makes use of a MOSFET resistor's transition from a strong inversion to a weak‐inversion or subthreshold operation. The temperature at which the transition occurs can be set to a desired value by adjusting the parameters of MOSFETs in the circuit. The sensor LSI can be made using a standard CMOS process and can be used as over‐temperature and over‐current protectors for LSI circuits. Copyright © 2009 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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