Magnetization Switching of Magnetic Submicron Structure Fabricated by Atomic Force Microscope | Zendy

Ishii Noriyuki | Zendy; Yokoyama Tatsuhiko | Zendy; Shibata Hiroki | Zendy; Yamada Tsutomu | Zendy; Shirakashi Junichi | Zendy; Takemura Yasushi | Zendy

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Magnetization Switching of Magnetic Submicron Structure Fabricated by Atomic Force Microscope

Author(s) -

Ishii Noriyuki,

Yokoyama Tatsuhiko,

Shibata Hiroki,

Yamada Tsutomu,

Shirakashi Junichi,

Takemura Yasushi

Publication year - 2008

Publication title -

ieej transactions on electrical and electronic engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.254

H-Index - 30

eISSN - 1931-4981

pISSN - 1931-4973

DOI - 10.1002/tee.20288

Subject(s) - magnetization , materials science , atomic force microscopy , rectangle , magnetic force microscope , layer (electronics) , nanowire , nanotechnology , condensed matter physics , optoelectronics , magnetic field , physics , geometry , mathematics , quantum mechanics

Magnetization switching of a CoFe submicron structure was studied. A patterned stripe‐shaped film consisting of CoFe/Cu/Co multilayer was prepared. By fabricating two oxide nanowires on the top CoFe layer by a nano‐oxidation technique using an atomic force microscope (AFM), a rectangular isolated region of CoFe was obtained. The magnetization of the CoFe rectangle was successfully switched by applying a pulsed current of 100 mA with 1‐ms duration through this stripe film. This switching was reproducible and observed with a threshold current of around 90 mA. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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