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Magnetization Switching of Magnetic Submicron Structure Fabricated by Atomic Force Microscope
Author(s) -
Ishii Noriyuki,
Yokoyama Tatsuhiko,
Shibata Hiroki,
Yamada Tsutomu,
Shirakashi Junichi,
Takemura Yasushi
Publication year - 2008
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20288
Subject(s) - magnetization , materials science , atomic force microscopy , rectangle , magnetic force microscope , layer (electronics) , nanowire , nanotechnology , condensed matter physics , optoelectronics , magnetic field , physics , geometry , mathematics , quantum mechanics
Abstract Magnetization switching of a CoFe submicron structure was studied. A patterned stripe‐shaped film consisting of CoFe/Cu/Co multilayer was prepared. By fabricating two oxide nanowires on the top CoFe layer by a nano‐oxidation technique using an atomic force microscope (AFM), a rectangular isolated region of CoFe was obtained. The magnetization of the CoFe rectangle was successfully switched by applying a pulsed current of 100 mA with 1‐ms duration through this stripe film. This switching was reproducible and observed with a threshold current of around 90 mA. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.