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AFM Nano‐oxidation of NiFe Thin Films Capped with Al‐Oxide Layers for Planar‐type Tunnel Junction
Author(s) -
Hasegawa Shunsuke,
Yamada Shogo,
Yamada Tsutomu,
Shirakashi Junichi,
Takemura Yasushi
Publication year - 2008
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20287
Subject(s) - planar , materials science , oxide , tunnel junction , atomic force microscopy , nano , layer (electronics) , nanowire , thin film , barrier layer , tunnel magnetoresistance , nanotechnology , optoelectronics , composite material , quantum tunnelling , metallurgy , computer graphics (images) , computer science
The NiFe‐based planar‐type magnetic tunnel junction was fabricated. The patterned NiFe thin film of 10 nm thickness was covered with an insulating Al‐oxide layer. The channel width was 2 µm. The nano‐oxidation technique using an atomic force microscope was used in order to form a tunnel barrier of the junction. The current‐voltage characteristic of the junction exhibited a rectifying curve, which indicated that the nanowires of NiFe‐oxide acted as the potential barrier. Equivalent values for the barrier height and barrier width of 1.75 eV and 1.5 nm were deduced from the Simmons' formula, respectively. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.