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High‐frequency Impedance and Sensitivity of Micro‐fluxgate Sensors Fabricated with Cobalt Base Amorphous Films
Author(s) -
Shin KwangHo,
Choi SangOn
Publication year - 2008
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20286
Subject(s) - reactance , capacitance , electrical impedance , electrical engineering , sensitivity (control systems) , inductance , electrical reactance , ohm , materials science , output impedance , fluxgate compass , amorphous solid , acoustics , voltage , optoelectronics , electronic engineering , engineering , physics , magnetic field , electrode , magnetometer , chemistry , organic chemistry , quantum mechanics
Abstract Micro‐fluxgate sensors 2 mm long, 1.5 mm wide were fabricated with CoZrNb amorphous films. Their high‐frequency input/output impedance was measured and evaluated to investigate whether the sensor output and/or sensitivity could be estimated by the complex impedance, especially the reactance. The output reactance changed from 11.1 to 6.1 ohm at 8 MHz by applying the external magnetic field of 10.5 Oe, whereas the input impedance changed from 12.3 to 10.1 ohm. The parasitic capacitance was driven from the measured reactance and resonance frequency. The inductance and inductive reactance could be evaluated with the parasitic capacitance and measured reactance. The tendency of output voltage dependent on frequency is similar to that of inductive reactance. The sensitivity of the fabricated sensor was 17.6 mV/VOe at 8 MHz. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.