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Growth of magnetite epitaxial thin films by gas flow sputtering and characterization by FMR
Author(s) -
Sakuma Hiroshi,
Sato Shota,
Gomimoto Ryo,
Hiyama Shunsuke,
Ishii Kiyoshi
Publication year - 2007
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20184
Subject(s) - reflection high energy electron diffraction , epitaxy , ferromagnetic resonance , sputtering , materials science , magnetization , analytical chemistry (journal) , thin film , substrate (aquarium) , ferromagnetism , condensed matter physics , anisotropy , magnetic anisotropy , saturation (graph theory) , electron diffraction , anisotropy energy , diffraction , magnetic field , chemistry , nanotechnology , optics , mathematics , oceanography , layer (electronics) , quantum mechanics , chromatography , physics , combinatorics , geology
The growth of magnetite (Fe 3 O 4 ) epitaxial thin films on MgO substrates were studied by using gas flow sputtering (GFS). Reflection high‐energy electron diffraction (RHEED) and atomic force microscopy showed that the surfaces of the films obtained at a substrate temperature T s of 300 °C and oxygen flow rates F O 2 of 0.12 − 0.18 sccm are fairly flat for the film thickness of about 200 nm. The saturation magnetization and resistivity were close to the reported values of Fe 3 O 4 for T s = 300°C and F O 2 = 0.12–0.20sccm. The films obtained at T s = 300°C and F O 2 =0.16 and 0.18 sccm showed Verwey transition, which is persuasive evidence of the formation of Fe 3 O 4 . The epitaxial relationship of Fe 3 O 4 (100)//MgO(100) and Fe 3 O 4 [100]//MgO[100] was confirmed by using ferromagnetic resonance (FMR), and the anisotropy constants and magnetization were obtained by the fitting of resonance‐field versus applied‐field angle curves. © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.