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In situ visualization of degradation of silicon field emitter tips
Author(s) -
Nozawa Naoyuki,
Kakushima Kuniyuki,
Hashiguchi Gen,
Fujita Hiroyuki
Publication year - 2007
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20143
Subject(s) - common emitter , field electron emission , materials science , silicon , nanometre , nanoscopic scale , nanotechnology , semiconductor , surface micromachining , optoelectronics , engineering physics , transmission electron microscopy , field (mathematics) , radius , electron , engineering , physics , computer science , composite material , fabrication , medicine , alternative medicine , pathology , quantum mechanics , mathematics , computer security , pure mathematics
This paper deals with the simultaneous observation of both the electron field emission from nanoscopic tips by electrical means and their structural shape change by an ultra‐high resolution transmission electron microscope (TEM). Nanoneedles with sharp tips of radius in the nanometer range were fabricated with semiconductor micromachining technology. A correlation between the electron field emission characteristics and the structural change of the emitter tip was clearly observed. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.