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Characteristics of a two‐dimensional integrated magnetic sensor for position sensing and motor control
Author(s) -
Kimura Takayuki,
Takasaki Keigo,
Masuzawa Toru
Publication year - 2006
Publication title -
ieej transactions on electrical and electronic engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.254
H-Index - 30
eISSN - 1931-4981
pISSN - 1931-4973
DOI - 10.1002/tee.20037
Subject(s) - hall effect sensor , position sensor , amplifier , electrical engineering , magnet , chip , sensitivity (control systems) , cmos , mosfet , integrated circuit , materials science , optoelectronics , magnetic amplifier , electronic circuit , position (finance) , physics , engineering , electronic engineering , operational amplifier , transistor , voltage , rotor (electric) , finance , economics
Abstract Two‐dimensional integrated magnetic sensors for position sensing were designed and fabricated with the standard 0.35‐µm CMOS process on silicon. One such type is the n‐type Hall sensor that uses an inversion layer under the gate oxide of the MOSFET. The Hall sensors were arrayed (64 × 64), and the control digital circuits and output amplifier were also integrated into the same chip. ‘One pixel’ was 50 × 50 µm, and the entire chip was 4.9 × 4.9 mm. The sensitivity of one of these sensors was 2.7 mV/(mA·kG). The two‐dimensional magnetic flux distribution was measured from the 5‐mm diameter Nd–Fe–B rare‐earth permanent magnet. About 42 s was required to measure one frame. The position of the magnet could be detected with the fabricated sensors. Magnetic sensors using an inversion layer in MOSFETs are useful for position sensing systems, but their noise characteristics, such as poor sensitivity, should be improved. © 2006 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.