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High‐Performance and Industrially Viable Nanostructured SiO x Layers for Interface Passivation in Thin Film Solar Cells
Author(s) -
Cunha José M. V.,
Oliveira Kevin,
Lontchi Jackson,
Lopes Tomás S.,
Curado Marco A.,
Barbosa João R. S.,
Vinhais Carlos,
Chen Wei-Chao,
Borme Jérôme,
Fonseca Helder,
Gaspar João,
Flandre Denis,
Edoff Marika,
Silva Ana G.,
Teixeira Jennifer P.,
Fernandes Paulo A.,
Salomé Pedro M. P.
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202170036
Subject(s) - passivation , copper indium gallium selenide solar cells , materials science , microelectronics , optoelectronics , thin film , thin film solar cell , nanotechnology , throughput , interface (matter) , layer (electronics) , solar cell , computer science , composite material , telecommunications , wireless , capillary number , capillary action
Ultrathin Solar Cells In article number 2000534 , José M. V. Cunha and co‐workers applied two SiO x passivation architectures in ultrathin CIGS solar cells. Both passivation approaches resulted in devices with a higher performance compared to a reference non‐passivated device. The potential to use SiO x as passivation material, deposited by a high throughput industrial technique based in microelectronics processing, yields promising results towards high‐performance low‐cost ultrathin CIGS solar cells.