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Importance of Fine Control of Se Flux for Improving Performances of Sb 2 Se 3 Solar Cells Prepared by Vapor Transport Deposition
Author(s) -
Kim Jekyung,
Ji Seunghwan,
Jang Yuseong,
Jeong Giuk,
Choi Jiwoon,
Kim Daehan,
Nam Sung-Wook,
Shin Byungha
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202100327
Subject(s) - passivation , deposition (geology) , materials science , optoelectronics , energy conversion efficiency , open circuit voltage , population , charge (physics) , chemical vapor deposition , anisotropy , solar cell , flux (metallurgy) , voltage , chemical engineering , nanotechnology , optics , electrical engineering , physics , metallurgy , engineering , paleontology , demography , layer (electronics) , quantum mechanics , sediment , sociology , biology
Sb 2 Se 3 possesses a quasi‐1D (Q1D) structure, which creates an anisotropic charge transporting behavior in which the carrier transport is very efficient along the Q1D direction, which is beneficial for solar cells as long as the absorber is properly aligned along the preferred orientation. However, Sb 2 Se 3 is prone to form donor‐like defects, such as V Se , that are detrimental to the performance. Therefore, both growth of Sb 2 Se 3 along the preferred orientations and the suppression of the formation of V Se are crucial in achieving Sb 2 Se 3 solar cells with a high efficiency. Herein, the importance of fine control of the extra supply of Se during the deposition of Sb 2 Se 3 in controlling crystallographic orientations and the population of V Se in the Sb 2 Se 3 films is described. This control determines the performance of the resulting solar cells in a superstrate configuration with a CdS buffer. Incorporation of Se during the growth resulted in a larger open‐circuit voltage due to the passivation of V Se . However, an excess supply of Se disrupts the favorable orientation by selenizing the top region of the CdS, and therefore degraded the short‐circuit current. Through the optimization of the extra supply of Se vapor, the power conversion efficiency is improved from 3.7% to 5.2%.