Surface Defect Passivation of Pb–Sn‐Alloyed Perovskite Film by 1,3‐Propanediammonium Iodide toward High‐Performance Photovoltaic Devices | Zendy

Zhang Lei | Zendy; Kang Qiao | Zendy; Shi Hongxi | Zendy; Hong Jianhe | Zendy; Song Yanping | Zendy; Chi Dan | Zendy; Huang Shihua | Zendy; He Gang | Zendy

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Surface Defect Passivation of Pb–Sn‐Alloyed Perovskite Film by 1,3‐Propanediammonium Iodide toward High‐Performance Photovoltaic Devices

Author(s) -

Zhang Lei,

Kang Qiao,

Shi Hongxi,

Hong Jianhe,

Song Yanping,

Chi Dan,

Huang Shihua,

He Gang

Publication year - 2021

Publication title -

solar rrl

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.544

H-Index - 37

ISSN - 2367-198X

DOI - 10.1002/solr.202100299

Subject(s) - passivation , perovskite (structure) , materials science , photovoltaic system , energy conversion efficiency , optoelectronics , iodide , open circuit voltage , nanotechnology , chemical engineering , voltage , inorganic chemistry , chemistry , electrical engineering , layer (electronics) , engineering

The power conversion efficiency (PCE) of narrow‐bandgap Pb–Sn‐alloyed perovskite solar cells (PVSCs) is seriously impeded by the large open‐circuit voltage ( V OC ) deficit. Finding an effective approach to passivate defects in the perovskite film is critical to reduce theV OCdeficit. Herein, a linear organic cation 1,3‐propanediammonium iodide (PDAI 2 ) is used to passivate the surface defects of perovskite film, thus restraining the nonradiative recombination. After treating with PDAI 2 , the defect density of perovskite film is decreased to half and the carrier lifetime is prolonged more than 1.5 times. As a result, the champion Pb–Sn‐alloyed PVSC based on PDAI 2 treatment exhibits a smallV OCdeficit of 0.39 V, and a high PCE of 20.2%.

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