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Influence of Dopant Elements on Degradation Phenomena in B‐ and Ga‐Doped Czochralski‐Grown Silicon
Author(s) -
Kwapil Wolfram,
Dalke Jonas,
Post Regina,
Niewelt Tim
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202100147
Subject(s) - dopant , doping , degradation (telecommunications) , silicon , materials science , gallium , carrier lifetime , analytical chemistry (journal) , boron , acceptor , hydrogen , optoelectronics , chemistry , metallurgy , electronic engineering , physics , organic chemistry , chromatography , engineering , condensed matter physics
The response of lifetime samples made from boron‐ and gallium‐doped Czochralski‐grown silicon from the same producer to light‐ and elevated temperature‐induced degradation (LeTID) conditions (varying illumination at 75 °C), to dark anneals (DAs) at 175 °C, and the temporary recovery (TR) reaction under different conditions is investigated. It is found that Ga‐doped samples behave very differently than their B‐doped counterparts: while the carrier lifetime remains at a high level if an illumination equivalent to 1 sun at 75 °C is applied, strong carrier lifetime degradation occurs at low light intensities. A capture cross‐sectional ratio in degraded Ga‐doped samples of ~26 is found, which is typical for the LeTID defect. TR of this degraded state is observed on Ga‐doped samples when the illumination intensity is increased at 75 °C and when samples are illuminated at 25 °C with intermediate intensity. During DA of B‐doped samples, a bulk‐related degradation and a subsequent surface‐related degradation are observed. In contrast, degradation of Ga‐doped samples during DA only occurs on long timescales, and its cause is not clear, yet. It is concluded that the specific dopant species plays an active role both during LeTID and for surface‐related degradation—possibly as a result of differences in the acceptor–hydrogen pair properties.