Premium
p‐Type Dopants As Dual Function Interfacial Layer for Efficient and Stable Tin Perovskite Solar Cells
Author(s) -
Chen Yuhui,
Cao Kun,
Cheng Yangfeng,
Shen Haoran,
Du Chao,
Wang Qichen,
Chen Cheng,
Cui Hao,
Lan Tao,
Liu Lihui,
Shen Wei,
Chen Shufen
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202100068
Subject(s) - dopant , materials science , perovskite (structure) , layer (electronics) , pedot:pss , work function , chemical engineering , tin , doping , optoelectronics , nanotechnology , metallurgy , engineering
Interfacial engineering plays a key role for the stability and efficiency of perovskite photovoltaics, especially for the tin perovskite solar cells (TPSCs). Herein, a simple and effective interfacial layer approach to modify the heterointerface between hole transport layer (HTL) and perovskite active layer is reported. By the deposition of a p‐type dopant, tetrafluoro‐tetracyanoquinodimethane (F4TCNQ) onto the commonly used poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS) HTL, a favorable energy level alignment with the mixed‐cation tin perovskite is obtained. Moreover, the F4TCNQ interfacial layer introduces a passivated contact and suppressed trap density at the HTL/perovskite interface through halogen bonding. As a result, the optimized TPSC yields an improved efficiency of 8.11% as compared with 6.41% of the reference device. Meanwhile, the stability of the TPSC is also improved due to the hydrophobicity of the F4TCNQ interfacial layer. This work demonstrates that the incorporation of an interfacial layer at the HTL/perovskite interface is a feasible approach to boost the efficiency and stability of inverted TPSC.