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Hydrogenation Mechanisms of Poly‐Si/SiO x Passivating Contacts by Different Capping Layers
Author(s) -
Truong Thien N.,
Yan Di,
Chen Wenhao,
Tebyetekerwa Mike,
Young Matthew,
Al-Jassim Mowafak,
Cuevas Andres,
Macdonald Daniel,
Nguyen Hieu T.
Publication year - 2020
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202070033
Subject(s) - passivation , materials science , polycrystalline silicon , wafer , silicon , oxide , crystallite , impurity , hydrogen , doping , chemical engineering , nanotechnology , layer (electronics) , optoelectronics , metallurgy , chemistry , thin film transistor , organic chemistry , engineering
Hydrogenation Mechanisms Hydrogen can deactivate defects and impurities inside doped polycrystalline silicon fi lms and interfacial oxide layers to improve the passivation qualities of passivating contacts on silicon wafers. In article number 1900476 , Thien N. Truong, Hieu T. Nguyen, and co‐workers elucidate the hydrogenation mechanisms of different post‐treatment techniques inside the fi lms and at the oxide interfaces.