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Lead‐Free Cs 2 SnI 6 Perovskites for Optoelectronic Applications: Recent Developments and Perspectives
Author(s) -
Ullah Saad,
Wang Jiaming,
Yang Peixin,
Liu Linlin,
khan Jansher,
Yang Shi-E.,
Xia Tianyu,
Guo Haizhong,
Chen Yongsheng
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000830
Subject(s) - sni , limiting , nanotechnology , perovskite (structure) , materials science , halide , fabrication , engineering physics , chemistry , engineering , mechanical engineering , inorganic chemistry , chemical engineering , medicine , biochemistry , alternative medicine , pathology , hydrolysis , acid hydrolysis
Since the booming research on perovskite solar cells (PSCs), organic–inorganic hybrid halide perovskites have triggered widespread research attention. This is seen in the unprecedented improvement of the power conversion efficiency (PCE) from an initial 3.8% to a remarkable 25.5%. Despite the fascinating improvement in PCEs, the toxicity of the detrimental lead element is a major limiting factor that hampers the commercialization prospect of lead‐based materials. Extensive efforts have been dedicated to the progress of lead‐free, stable, and ecofriendly perovskite materials for green‐energy applications. Recently, double‐halide Cs 2 SnI 6 perovskite emerged as a star material due to its favorable optoelectronic properties, stable nature, and environmental friendliness. Thus, an in‐time review to recapitulate the recent advances of Cs 2 SnI 6 is critical to provide viable theoretical and experimental strategies for synergic optimization of perovskite films. Herein, the theoretical and experimental understandings of the properties of Cs 2 SnI 6 are summarized and the different fabrication methodologies and their influences on the properties of Cs 2 SnI 6 are discussed. The application potential of Cs 2 SnI 6 is further reviewed and the limiting factors that influence the performance of Cs 2 SnI 6 devices are highlighted. In the end, prospective research directions to improve the optoelectronic properties are presented for developing efficient Cs 2 SnI 6 devices.