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Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al x Ga 1− x As y P 1− y Step‐Graded Buffer Structures
Author(s) -
Feifel Markus,
Lackner David,
Schön Jonas,
Ohlmann Jens,
Benick Jan,
Siefer Gerald,
Predan Felix,
Hermle Martin,
Dimroth Frank
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000763
Subject(s) - triple junction , materials science , optoelectronics , solar cell , epitaxy , transmittance , energy conversion efficiency , current density , silicon , short circuit , gallium arsenide , absorption (acoustics) , nanotechnology , electrical engineering , layer (electronics) , voltage , physics , quantum mechanics , engineering , composite material
III–V/Si multi‐junction solar cells are potential successors to the silicon single‐junction cell due to their efficiency potential of up to 40% in the radiative limit. [1] Herein, latest results of epitaxially integrated GaInP/GaAs/Si triple‐junction cells are presented. To reduce parasitic absorption losses, which have limited the current density in the Si bottom cell in the previous devices, transparent Al x Ga 1– x As y P 1– y step‐graded metamorphic buffers are investigated. Compared with previous GaAs y P 1– y step‐graded buffers, the transmittance is enhanced significantly, while no significant impact on the threading dislocation density is observed. Implemented into a new triple‐junction solar cell, an increase in short‐circuit current density from 10.0 to 12.2 mA cm − 2 is achieved, leading to a new record conversion efficiency of 25.9% under AM1.5g conditions.
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