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SMART Cast‐Monocrystalline p‐Type Silicon Passivated Emitter and Rear Cells: Efficiency Benchmark and Bulk Lifetime Analysis
Author(s) -
Maus Stephan,
Maischner Felix,
Riepe Stephan,
Greulich Johannes,
Lohmüller Elmar,
Schindler Florian,
Saint-Cast Pierre,
Krenckel Patricia,
Hess Adam,
Lohmüller Sabrina,
Wolf Andreas,
Preu Ralf
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000752
Subject(s) - monocrystalline silicon , materials science , wafer , common emitter , silicon , doping , boron , optoelectronics , carrier lifetime , passivation , nanotechnology , layer (electronics) , chemistry , organic chemistry
Herein, boron‐doped cast‐monocrystalline silicon wafers that have been fabricated using the Seed Manipulation for ARtificially controlled defect Technique (SMART mono‐Si) are examined. Their suitability for passivated emitter and rear cell (PERC) fabrication is investigated. Applying a zero busbar layout energy conversion efficiencies of η = 21.9% for SMART mono‐Si, η = 22.2% for gallium‐doped Cz‐Si (Cz‐Si:Ga), and η = 22.3% for boron‐doped Cz‐Si (Cz‐Si:B) are achieved at similar doping levels between 0.7 Ω cm ≤ ρ B ≤ 1.0 Ω cm. Therefore, SMART mono‐Si PERCs show almost the same performance as Cz‐Si PERCs. Apart from the performance of SMART mono‐Si PERCs, the minority charge carrier bulk lifetime τ B of the SMART mono‐Si wafers after different high‐temperature process steps in the PERC process flow is investigated. After emitter formation, this analysis confirms the high material quality of SMART mono‐Si yielding τ B ≈ 1.3 ms at an injection level of Δ n = 10 15 cm −3 . The bulk lifetime after firing is similar to the level determined for mCz‐Si:B and Cz‐Si:Ga reference wafers of similar doping level.