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Discovery of a New Intermediate Enables One‐Step Deposition of High‐Quality Perovskite Films via Solvent Engineering
Author(s) -
Hu Chen,
Shivarudraiah Sunil B.,
Sung Herman H. Y.,
Williams Ian D.,
Halpert Jonathan E.,
Yang Shihe
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000712
Subject(s) - perovskite (structure) , formamidinium , halide , solvent , bromide , materials science , crystallization , chemical engineering , band gap , nanocrystal , light emitting diode , diode , nanotechnology , chemistry , optoelectronics , inorganic chemistry , crystallography , organic chemistry , engineering
Bromide‐based organo‐metal halide perovskites have shown great potential for use in tandem solar cells (SCs), light‐emitting diodes (LEDs), and photodetectors. Herein, a new protocol using a one‐step deposition method for producing formamidinium lead bromide (FAPbBr 3 ) perovskites is reported, which features a solvent‐engineered intermediate phase to achieve superior films. For the first time, a FABr–PbBr 2 –DMSO intermediate is identified and single crystals of the same intermediate compound are synthesized. A systematic investigation of phase evolution in the film formation process reveals that DMSO enables crystallization of the FABr–PbBr 2 –DMSO intermediate and thus modulates the crystallization process of FAPbBr 3 perovskite, achieving uniform, smooth films with Volmer–Weber morphology. To prevent hole leakage arising from the larger bandgap of FAPbBr 3 than FAPbI 3 , an additional layer of Mg‐doped ZnO nanoparticles is added. As a result, inverted SCs using these solvent engineered films achieve power conversion efficiencies (PCEs) of up to 9.06%, the highest reported efficiency for inverted FAPbBr 3 perovskite devices.