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Assembly of Fe(III)‐Grafted Metal–Organic Complexes as p‐Type Dopants for Efficient and Stable Perovskite Solar Cells
Author(s) -
Zhou Xuesong,
Hao Sue,
Qiu Lele,
Fan Ruiqing,
Zhang Jian,
Yang Yulin
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000637
Subject(s) - dopant , materials science , energy conversion efficiency , perovskite (structure) , metal , chemical engineering , doping , hysteresis , photovoltaic system , inert , nanotechnology , optoelectronics , chemistry , organic chemistry , metallurgy , electrical engineering , physics , quantum mechanics , engineering
Realizing the rapid/controllable oxidation of 2,2′,7,7′‐tetrakis( N , N ‐di‐ p ‐methoxyphenylamine)‐9,9′‐spirobifluorene (Spiro‐OMeTAD) under an inert atmosphere, reducing the J–V hysteresis and enhancing the air stability of devices is extremely significant to fabricate high‐performance perovskite solar cells (PSCs). Herein, the Fe(III) ion grafted metal–organic complexes (Fe(III) ⊂ MOCs) are assembled and used as the p‐type dopants of hole transport layers (HTLs) to prepare efficient and stable PSCs. Consequently, the optimal Fe(III) ⊂ In‐2‐bpydc‐doped device presents a significantly enhanced power conversion efficiency (PCE) of 20.46%, benefitting from the improved hole extraction and weakened carrier recombination at the interface between HTLs and perovskite films. More importantly, the modified device possesses a reduced J–V hysteresis index (HI) of 0.094, and can maintain nearly 90% of its initial PCE value after being exposed to the air at ≈25 °C and relative humidity (RH) of ≈35% for 4 weeks, which is attributed to the restrained detrimental penetration behavior by the MOC carrier part of dopants. This work is of important guiding significance for the application of MOC materials in photovoltaic fields.