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Doping in Semiconductor Oxides‐Based Electron Transport Materials for Perovskite Solar Cells Application
Author(s) -
Zhu Lihua,
Shang Xueni,
Lei Kaixiang,
Wu Cuncun,
Zheng Shijian,
Chen Cong,
Song Hongwei
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000605
Subject(s) - doping , materials science , semiconductor , electron mobility , optoelectronics , perovskite (structure) , band gap , hysteresis , electron , ion , nanotechnology , condensed matter physics , chemistry , physics , crystallography , organic chemistry , quantum mechanics
From the perspective of the device structure of perovskite solar cells (PSCs), the electron transport layer is one of the essential components and plays a significant role in suppressing carrier recombination. Furthermore, its decisiveness is related to the quality of perovskite film, the rapid interface carrier extraction, and the bandgap alignment. However, the deficiency of the semiconductor oxides based electron transport materials, especially for most studied TiO 2 , is that their carrier mobility is one to three orders of magnitude lower than the most commonly used hole transport materials, leading to an imbalanced carrier flux and unpredicted hysteresis. Doping new ions are the most effective ways to improve electron mobility and tune the bandgap, while the fundamental mechanism of doping in the majority of cases are still lacking. Herein, the doping effect on semiconductor oxides is reviewed and emphasized by classifying the doping ions according to the critical factors of lattice optimization, a carrier transporting improvement, and interface modification. This review is the first systematic summary of the ion doping characteristics in oxide electron transport layers of PSCs. Finally, the implementation of doping ions in electron transport materials is briefly discussed for further enhancing the photovoltaic performance of PSCs.