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Solution‐Processed Electron‐Selective Contacts Enabling 21.8% Efficiency Crystalline Silicon Solar Cells
Author(s) -
Wang Wenjie,
He Jian,
Cai Lun,
Wang Zilei,
Karuturi Siva Krishna,
Gao Pingqi,
Shen Wenzhong
Publication year - 2020
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000569
Subject(s) - materials science , silicon , amorphous silicon , crystalline silicon , doping , optoelectronics , energy conversion efficiency , electrical resistivity and conductivity , solar cell , amorphous solid , nanotechnology , crystallography , chemistry , electrical engineering , engineering
Crystalline silicon (c‐Si) solar cells with carrier‐selective passivating contacts have been prosperously developed over the past few years, showing fundamental advantages, e.g., simpler configurations and higher potential efficiencies, compared with conventional c‐Si solar cells using highly doped emitters. Herein, solution‐processed cesium halides (CsX, X represents F, Cl, Br, I) are investigated as electron‐selective contacts for c‐Si solar cells, enabling lowest contact resistivity down to about 1 mΩ cm 2 for slightly doped n‐type c‐Si/CsF/Al contact. After inserting a thin intrinsic amorphous silicon (a‐Si:H(i)) passivating layer, the contact resistivity can still be kept in a low value, about 10 mΩ cm 2 . With full area rear‐side a‐Si:H(i)/CsF/Al electron‐selective passivating contacts, record power conversion efficiencies of about 21.8% are finally demonstrated for n‐type c‐Si solar cells, showing a simple approach to realize high‐efficiency c‐Si solar cells.