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Tuning the Work Function of the Metal Back Contact toward Efficient Cu 2 ZnSnSe 4 Solar Cells
Author(s) -
Wang Dongxiao,
Wu Jianyu,
Guo Hongling,
Wu Moqing,
Wu Li,
Zhang Shengli,
Ao Jianping,
Wang Hai,
Zhang Yi
Publication year - 2021
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000391
Subject(s) - kesterite , work function , solar cell , materials science , czts , optoelectronics , band bending , open circuit voltage , work (physics) , nanotechnology , voltage , electrical engineering , layer (electronics) , mechanical engineering , engineering
Carrier collection is crucial for thin film photoelectronic devices. As photoelectronic devices, the undesirable energy band structure between the metal contact and p‐type absorber is a serious limitation to boost the open‐circuit voltage ( V OC ) of thin film solar cells. Herein, the carrier collection near the back contact of a kesterite solar cell is promoted by tailoring the work function of the back contact. By diffusing P into Mo back contact of the kesterite solar cell, the work function of the Mo back contact is increased from 4.68 to 5.62 eV and the diffused P bonds with Mo as anions, thus resulting in the energy band bending upward at the back interface and enabling the fluent transmission of holes. The efficiency of Cu 2 ZnSnSe 4 solar cells increases from 6.8% to 11.28%. The results expand the path to improving carrier collection in solar cells and electronic devices utilizing metal film contacts.