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Solution‐Processed Pure Sulfide Cu 2 (Zn 0.6 Cd 0.4 )SnS 4 Solar Cells with Efficiency 10.8% Using Ultrathin CuO Intermediate Layer
Author(s) -
Zhuk Siarhei,
Wong Terence Kin Shun,
Petrović Miloš,
Kymakis Emmanuel,
Hadke Shreyash Sudhakar,
Lie Stener,
Wong Lydia Helena,
Sonar Prashant,
Dey Avishek,
Krishnamurthy Satheesh,
Dalapati Goutam Kumar
Publication year - 2020
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000293
Subject(s) - materials science , energy conversion efficiency , molybdenum , solar cell , layer (electronics) , thin film , optoelectronics , sputter deposition , oxide , sputtering , sulfide , chemical engineering , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , chromatography , engineering
Herein, it is demonstrated that incorporating ultrathin p‐type cupric oxide (CuO) enhances the performance and stability of solution‐processed Cu 2 (Zn 0.6 Cd 0.4 )SnS 4 (CZCTS)/CdS thin film solar cells. In sol–gel CZCTS/CdS thin film solar cells, nanoscale CuO films (4–32 nm) are deposited on top of molybdenum (Mo) by magnetron sputtering and this is used as an intermediate layer (IL). The CuO IL thickness has a significant effect on the short‐circuit current density ( J SC ) in CZCTS/CdS solar cell devices. As a result, a maximum power conversion efficiency (PCE) of 10.77% is measured for the optimized device with 4 nm CuO compared with 10.03% for the reference device without a CuO layer. Furthermore, the stability of the devices is enhanced significantly by incorporating the CuO IL. This work demonstrates that through proper design of the CuO IL thickness, both the back interface quality and optical property of the CZCTS absorber can be tuned to enhance the device performance.