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Over 10% Efficient Pure CZTSe Solar Cell Fabricated by Electrodeposition with Ge Doping
Author(s) -
Zhang Zhaojing,
Gao Qing,
Guo Jiajia,
Zhang Yongheng,
Han Yanchen,
Ao Jianping,
Jeng Ming-Jer,
Liu Fangfang,
Liu Wei,
Zhang Yi
Publication year - 2020
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000059
Subject(s) - kesterite , materials science , solar cell , energy conversion efficiency , annealing (glass) , doping , alloy , fabrication , optoelectronics , solar cell efficiency , layer (electronics) , nanotechnology , czts , chemical engineering , metallurgy , pathology , medicine , alternative medicine , engineering
The fabrication of kesterite CZTSe solar cells via an electrodeposition method provides an attractive approach for the low‐cost and environment‐friendly energy supply, yet the highest conversion efficiency for such solar cells (around 9%) is still far away from the highest efficiency of Cu‐based kesterite solar cells. Herein, a 10.54% efficient CZTSe solar cell (0.28 cm 2 active sized area, without an antireflection layer) is developed by introducing electrodeposited Cu–Ge alloy layer at the bottom of metal precursor. It is found that the presence of Ge element within the bottom of the film can promote downward diffusion of Sn element. Consequently, the distribution of Sn is relatively homogeneous during the annealing process; thus, the formation of undesirable defect clusters is inhibited and the band alignment of the CdS/CZTSe interface is optimized. As a result, the conversion efficiency of CZTSe thin‐film solar cells is increased from 6.74% to 10.54%, which is the highest efficiency reported for electrochemically fabricated CZTSe solar cells.