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Toward High Solar Cell Efficiency with Low Material Usage: 15% Efficiency with 14 μm Polycrystalline Silicon on Glass
Author(s) -
Garud Siddhartha,
Trinh Cham Thi,
Abou-Ras Daniel,
Stannowski Bernd,
Schlatmann Rutger,
Rech Bernd,
Amkreutz Daniel
Publication year - 2020
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.202000058
Subject(s) - materials science , polycrystalline silicon , solar cell , silicon , crystallite , silicon solar cell , engineering physics , optoelectronics , composite material , metallurgy , engineering , thin film transistor , layer (electronics)
Liquid‐phase‐crystallized silicon (LPC‐Si) is a bottom‐up approach to creating solar cells with the potential to avoid material loss and energy usage in wafer slicing techniques. A desired thickness of silicon (5–40 μm) is crystallized with a line‐shaped energy source, which is a laser, herein. The first part reports the efforts to optimize amorphous silicon contact layers for better surface passivation. The second part covers laser firing on the electron contact. It enables a controllable trade‐off between charge collection and fill factor (FF) by creating a low resistance contact, while preserving a‐Si:H (i) passivation in other areas. Short‐circuit current density ( J SC ) is observed to be up to 33:1 mA cm −2 , surpassing all previously reported values for this technology. Open‐circuit voltage ( V OC ) of up to 658 mV also exceeded every previous value published at a low bulk doping concentration (1 × 10 16 cm −3 ). Laser firing reduced J SC by 0:6 mA cm −2 on average but improved the FF by 22.5% absolute on average, without any significant effect on V OC . Collectively, these efforts have helped in achieving a new in‐house record efficiency for LPC‐Si of 15.1% and show a potential to reach 16% efficiency in the near future with optimization of series resistance.