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Design Principles of Silicon Heterojunction Solar Cells with Dopant‐Free Interdigitated Back Contacts
Author(s) -
Yang Zhenhai,
Lin Hao,
Sheng Jiang,
Yang Xi,
Wang Wei,
Chee Kuan W. A.,
Gao Pingqi,
Ye Jichun
Publication year - 2019
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201970104
Subject(s) - passivation , heterojunction , free carrier , materials science , optoelectronics , dopant , electrical contacts , silicon , solar cell , engineering physics , nanotechnology , doping , physics , layer (electronics)
Interdigitated Back Contacts In article number 1900230 , Kuan W. A. Chee, Pingqi Gao, Jichun Ye, and co‐workers review experiments and simulations for carrier transport/recombination mechanisms related to fully dopantfree interdigitated back contact heterojunction solar cells by addressing the optical and electrical loss distributions, current flow, and current densities, as well as the passivation and contact properties.