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Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules
Author(s) -
Sulas Dana B.,
Johnston Steve,
Jordan Dirk C.
Publication year - 2019
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201970074
Subject(s) - heterojunction , photovoltaic system , silicon , degradation (telecommunications) , materials science , optoelectronics , kinetics , characterization (materials science) , redistribution (election) , nanotechnology , engineering physics , electronic engineering , electrical engineering , engineering , physics , quantum mechanics , politics , political science , law
In article no. 1900102 , Dana B. Sulas, Steve Johnston, and Dirk C. Jordan introduce a time‐resolved, spatially correlated methodology for non‐destructive characterization of silicon heterojunctions with intrinsic thin layer photovoltaic modules. Series resistance and bulk lifetime degradation after 10 years of outdoor field operation is demonstrated by measuring the kinetics of carrier redistribution following patterned laser screening.