Tailoring Electronic Properties of SnO 2  Quantum Dots via Aluminum Addition for High‐Efficiency Perovskite Solar Cells (Solar RRL 5∕2019) | Zendy

Wang Enqi | Zendy; Chen Peng | Zendy; Yin Xingtian | Zendy; Wu Yutao | Zendy; Que Wenxiu | Zendy

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Tailoring Electronic Properties of SnO 2 Quantum Dots via Aluminum Addition for High‐Efficiency Perovskite Solar Cells (Solar RRL 5∕2019)

Author(s) -

Wang Enqi,

Chen Peng,

Yin Xingtian,

Wu Yutao,

Que Wenxiu

Publication year - 2019

Publication title -

solar rrl

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.544

H-Index - 37

ISSN - 2367-198X

DOI - 10.1002/solr.201970055

Subject(s) - perovskite (structure) , energy conversion efficiency , quantum dot , materials science , optoelectronics , conductivity , aluminium , layer (electronics) , perovskite solar cell , engineering physics , nanotechnology , chemical engineering , chemistry , composite material , physics , engineering

In article no. 1900041 , Wenxiu Que and co‐workers propose a facile method to effectively improve the electronic properties of the effective electron transport layer by adding an aluminum chloride precursor solution into a SnO 2 quantum dots solution. Thus, the conductivity and film coverage of the SnO 2 film and the energy band alignment at the SnO 2 /perovskite interface have significantly improved, thereby improving the power conversion efficiency of the devices.

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