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Tailoring Electronic Properties of SnO 2 Quantum Dots via Aluminum Addition for High‐Efficiency Perovskite Solar Cells (Solar RRL 5∕2019)
Author(s) -
Wang Enqi,
Chen Peng,
Yin Xingtian,
Wu Yutao,
Que Wenxiu
Publication year - 2019
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201970055
Subject(s) - perovskite (structure) , energy conversion efficiency , quantum dot , materials science , optoelectronics , conductivity , aluminium , layer (electronics) , perovskite solar cell , engineering physics , nanotechnology , chemical engineering , chemistry , composite material , physics , engineering
In article no. 1900041 , Wenxiu Que and co‐workers propose a facile method to effectively improve the electronic properties of the effective electron transport layer by adding an aluminum chloride precursor solution into a SnO 2 quantum dots solution. Thus, the conductivity and film coverage of the SnO 2 film and the energy band alignment at the SnO 2 /perovskite interface have significantly improved, thereby improving the power conversion efficiency of the devices.

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