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Large‐Area Material and Junction Damage in c–Si Solar Cells by Potential‐Induced Degradation (Solar RRL 4∕2019)
Author(s) -
Xiao Chuanxiao,
Jiang ChunSheng,
Harvey Steve P.,
Sulas Dana,
Chen Xihan,
Liu Jun,
Pan Jie,
Moutinho Helio,
Norman Andrew,
Hacke Peter,
Johnston Steve,
AlJassim Mowafak
Publication year - 2019
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201970041
Subject(s) - degradation (telecommunications) , nanometre , crystalline silicon , materials science , micrometer , millimeter , solar cell , silicon , characterization (materials science) , nanotechnology , optoelectronics , engineering physics , composite material , optics , physics , electrical engineering , engineering
In article no. 1800303 , Chuanxiao Xiao, Chun‐Sheng Jiang, and co‐workers report a new potential‐induced degradation (PID) mechanism for crystalline silicon. Multiple characterization techniques in various aspects of a material's chemical, structural, electrical, and optoelectrical nature, as well as in atomic, nanometer, micrometer, millimeter, and cell and module scales, are combined. All results point consistently to a new discovery: substantial large‐area deterioration of materials and junctions plays a major role.