Large‐Area Material and Junction Damage in c–Si Solar Cells by Potential‐Induced Degradation (Solar RRL 4∕2019) | Zendy

Xiao Chuanxiao | Zendy; Jiang ChunSheng | Zendy; Harvey Steve P. | Zendy; Sulas Dana | Zendy; Chen Xihan | Zendy; Liu Jun | Zendy; Pan Jie | Zendy; Moutinho Helio | Zendy; Norman Andrew | Zendy; Hacke Peter | Zendy; Johnston Steve | Zendy; AlJassim Mowafak | Zendy

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Large‐Area Material and Junction Damage in c–Si Solar Cells by Potential‐Induced Degradation (Solar RRL 4∕2019)

Author(s) -

Xiao Chuanxiao,

Jiang ChunSheng,

Harvey Steve P.,

Sulas Dana,

Chen Xihan,

Liu Jun,

Pan Jie,

Moutinho Helio,

Norman Andrew,

Hacke Peter,

Johnston Steve,

AlJassim Mowafak

Publication year - 2019

Publication title -

solar rrl

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.544

H-Index - 37

ISSN - 2367-198X

DOI - 10.1002/solr.201970041

Subject(s) - degradation (telecommunications) , nanometre , crystalline silicon , materials science , micrometer , millimeter , solar cell , silicon , characterization (materials science) , nanotechnology , optoelectronics , engineering physics , composite material , optics , physics , electrical engineering , engineering

In article no. 1800303 , Chuanxiao Xiao, Chun‐Sheng Jiang, and co‐workers report a new potential‐induced degradation (PID) mechanism for crystalline silicon. Multiple characterization techniques in various aspects of a material's chemical, structural, electrical, and optoelectrical nature, as well as in atomic, nanometer, micrometer, millimeter, and cell and module scales, are combined. All results point consistently to a new discovery: substantial large‐area deterioration of materials and junctions plays a major role.

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