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Interfacial Behavior and Stability Analysis of p ‐Type Crystalline Silicon Solar Cells Based on Hole‐Selective MoO X /Metal Contacts
Author(s) -
Cao Shuangying,
Li Jingye,
Lin Yinyue,
Pan Tianyu,
Du Guanlin,
Zhang Juan,
Yang Liyou,
Chen Xiaoyuan,
Lu Linfeng,
Min Na,
Yin Min,
Li Dongdong
Publication year - 2019
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201900274
Subject(s) - materials science , passivation , work function , heterojunction , crystalline silicon , band bending , wafer , solar cell , silicon , molybdenum , electrode , metal , energy conversion efficiency , chemical engineering , optoelectronics , nanotechnology , layer (electronics) , metallurgy , chemistry , engineering
Molybdenum trioxide (MoO X , X < 3), with a large work function, can induce upward band bending in crystalline silicon ( c ‐Si) when constructing a heterojunction, which makes it an attractive candidate for hole‐selective contact in c ‐Si solar cells. Herein, the passivation property and hole selectivity of MoO X thin films are investigated on p ‐type c ‐Si wafers using MoO X /aluminum (Al) as rear contacts. To elevate the performance from the aspect of light management, silver (Ag) and copper (Cu) are further used as back electrodes instead of Al. Solar cells with Ag electrodes deliver the best performance with a power conversion efficiency of 18.74%, followed by Cu (17.61%) and Al (16.36%) electrodes, attributing to the better reflectivity of Ag and Cu. It is also noted that solar cells with MoO X /Ag and MoO X /Cu contacts show significant degradation under room temperature storage. The interfacial evolutions are then carefully studied as a function of elevated temperature that accelerate the thermodynamic process. The degradation mechanism involves redox reaction and metal diffusion at the MoO X /metal interfaces. This work points out the importance of selecting the adjacent layers of MoO X and regulating the interfaces to stabilize the MoO X ‐based c ‐Si solar cells.