Premium
γ‐Ga 2 O 3 Nanocrystals Electron‐Transporting Layer for High‐Performance Perovskite Solar Cells
Author(s) -
Hu Ke-Hao,
Wang Zhao-Kui,
Wang Kai-Li,
Zhuo Ming-Peng,
Zhang Yue,
Igbari Femi,
Ye Qing-Qing,
Liao Liang-Sheng
Publication year - 2019
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201900201
Subject(s) - materials science , perovskite (structure) , hysteresis , nanocrystal , crystallinity , layer (electronics) , fabrication , energy conversion efficiency , perovskite solar cell , sintering , solution process , spin coating , nanotechnology , chemical engineering , solar cell , optoelectronics , thin film , composite material , medicine , physics , alternative medicine , pathology , quantum mechanics , engineering
The electron‐transporting layer (ETL) plays a very important role in perovskite solar cells (PSCs). The traditional TiO 2 ETL exhibits drawbacks such as complex preparation process and low stability. Devices incorporating TiO 2 as the ETL also show large hysteresis that limits their performance. Herein, Ga 2 O 3 nanocrystals (NCs), prepared by a solution process, are applied as an ETL in n‐i‐p planar structured PSCs. The Ga 2 O 3 ‐based devices exhibit negligible hysteresis and achieve higher performance than the TiO 2 ‐based devices. Due to better energy level matching and smoother surface morphology, films of Ga 2 O 3 NCs make good interfacial contact with the perovskite top layer, improving the charge transport efficiency. The perovskite layer also exhibits high crystallinity. Unlike TiO 2 , which is commonly prepared by high‐temperature sintering or solution hydrolysis, films of Ga 2 O 3 NCs can be prepared by solution spin‐coating at a low temperature. This greatly reduces the complexity of fabrication and improves device performance.