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Effective Lifetime Approaching 1 ms in High‐Resistivity p‐Type Kerfless Multi‐Crystalline Wafers
Author(s) -
Hofstetter Jasmin,
Fraser Ray,
Jonczyk Ralf,
Ersen Ali,
Sanderson Laureen,
Linton John,
Lorenz Adam
Publication year - 2019
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201900009
Subject(s) - wafer , ingot , electrical resistivity and conductivity , materials science , common emitter , boron , optoelectronics , composite material , electrical engineering , chemistry , organic chemistry , alloy , engineering
Kerfless p‐type wafers of varying resistivity are grown with Direct Wafer® technology with precise control of dosing the boron concentration in the melt. Bulk resistivity values at very low boron concentration corresponding to >100 Ω‐cm are achieved. Select wafers are processed into lifetime samples and effective electron lifetimes of up to 847 μs are measured, corresponding to an estimated bulk lifetime above 1 ms. In contrast to ingot‐based wafers, a very tight resistivity distribution can be achieved during continuous growth using Direct Wafer technology at virtually any desired target resistivity, without variations caused by zone refining. Thus, a Direct Wafer product can be customized for a given solar cell architecture by growing each individual wafers at the optimum bulk resistivity and wafer thickness. Efficiency parity with high‐performance cast multi‐crystalline wafers has already been demonstrated on a passivated emitter and rear cell production line at 20.5% efficiency.