Sb 2 (Se 1‐x S x ) 3  Thin‐Film Solar Cells Fabricated by Single‐Source Vapor Transport Deposition | Zendy

Lu Shuaicheng | Zendy; Zhao Yang | Zendy; Wen Xixing | Zendy; Xue DingJiang | Zendy; Chen Chao | Zendy; Li Kanghua | Zendy; Kondrotas Rokas | Zendy; Wang Chong | Zendy; Tang Jiang | Zendy

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Sb 2 (Se 1‐x S x ) 3 Thin‐Film Solar Cells Fabricated by Single‐Source Vapor Transport Deposition

Author(s) -

Lu Shuaicheng,

Zhao Yang,

Wen Xixing,

Xue DingJiang,

Chen Chao,

Li Kanghua,

Kondrotas Rokas,

Wang Chong,

Tang Jiang

Publication year - 2019

Publication title -

solar rrl

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.544

H-Index - 37

ISSN - 2367-198X

DOI - 10.1002/solr.201800280

Subject(s) - materials science , evaporation , thin film , crystallinity , deposition (geology) , chemical vapor deposition , analytical chemistry (journal) , fabrication , layer (electronics) , solar cell , crystallography , optoelectronics , nanotechnology , chemistry , composite material , physics , paleontology , sediment , biology , medicine , alternative medicine , chromatography , pathology , thermodynamics

The properties of Sb 2 (Se 1‐x S x ) 3 alloy films can be continuously tuned by changing its composition, enabling potentially better device efficiency compared to the Sb 2 S 3 or Sb 2 Se 3 counterparts. Fabrication of Sb 2 (Se 1−x S x ) 3 films with good uniformity and orientation are prerequisites to realize their full potential. Here, pure‐phase and high‐uniformity Sb 2 (Se 1‐x S x ) 3 absorbers are successfully produced via a vapor transport deposition method employing a single evaporation source. Increasing the travelling distance of vapor particles can improve the morphology and crystallinity of Sb 2 (Se 1‐x S x ) 3 films, and as a result, compact Sb 2 (Se 1‐x S x ) 3 films with strong preferential [221] orientation and uniform composition throughout the whole film are obtained. Further, the CdS surface is treated with H 2 O 2 solution and a device with a champion efficiency of 6.30% is obtained, a new efficiency record for Sb 2 (Se 1‐x S x ) 3 based thin‐film solar cells without a hole‐transporting layer.

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