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Tunnel Oxide – Magnesium as Electron‐Selective Passivated Contact for n‐type Silicon Solar Cell
Author(s) -
Zhang Zhi,
Liao Mingdun,
Tong Hui,
Wang Dan,
Quan Cheng,
Gao Pingqi,
Sheng Jiang,
Guo Wei,
Yang Jie,
Zhang Yanhe,
Gong Xinxin,
Zhang Xinyu,
Yan Baojie,
Zhou Xiaoling,
Zeng Yuheng,
Ye Jichun
Publication year - 2018
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201800241
Subject(s) - passivation , materials science , wafer , silicon , electrical resistivity and conductivity , magnesium , solar cell , oxide , crystalline silicon , thermal oxidation , analytical chemistry (journal) , optoelectronics , mineralogy , nanotechnology , metallurgy , chemistry , electrical engineering , layer (electronics) , engineering , chromatography
A tunnel silicon oxide (SiO x ) and magnesium (Mg) electron‐selective structure and its application for n‐type c‐Si solar cell are carefully studied in this work. The fabrication, reflectance, passivation quality, contact resistivity, and thermal stability of the SiO x /Mg contact are investigated. The optimized thermally annealed SiO x at 700 °C leads to the best surface passivation and acceptable contact resistivity for the SiO x /Mg contact on an n‐type c‐Si wafer, i.e., the lowest single‐side surface saturated dark current ( J 0 ) of about 100 fA cm −2 and the contact resistivity of less than 30 mΩ cm −2 are achieved. In general, the SiO x /Mg structure exhibits robust performances to be used as an electron‐selective passivated contact for n‐type c‐Si solar cells.