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Promising Sb 2 (S,Se) 3 Solar Cells with High Open Voltage by Application of a TiO 2 /CdS Double Buffer Layer
Author(s) -
Wang Weihuang,
Wang Xiaomin,
Chen Guilin,
Chen Binwen,
Cai Huiling,
Chen Tao,
Chen Shuiyuan,
Huang Zhigao,
Zhu Changfei,
Zhang Yi
Publication year - 2018
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201800208
Subject(s) - open circuit voltage , materials science , chalcogenide , energy conversion efficiency , optoelectronics , buffer (optical fiber) , double layer (biology) , photovoltaic system , voltage , layer (electronics) , electrical engineering , nanotechnology , engineering
Sb 2 (S,Se) 3 has gathered a lot of attention recently as a promising alternative absorber material. However, the efficiencies of Sb 2 (S,Se) 3 devices are seriously restricted by the low open circuit voltage ( V oc ). In this work, Sb 2 (S,Se) 3 devices equipped with a TiO 2 /CdS double buffer layer are prepared by a hydro‐thermal method, which aims to overcome the V oc deficit. The obtained average V oc of the devices is 785 mV and the champion efficiency of 5.73% is also achieved with a highest V oc = 792 mV, Jsc = 12.03 mA cm −2 , FF = 60.9%. The improvement of V oc is benefited from the reduced band gap offset after application of the double buffer layer. The non‐encapsulated device could keep an average power conversion efficiency of 5.69% after being stored in ambient air over a month. This indicates the great potential of a double buffer layer in new chalcogenide photovoltaic devices.